Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program
Yıl: 2017 Cilt: 21 Sayı: 6 Sayfa Aralığı: 1258 - 1265 Metin Dili: İngilizce DOI: 10.16984/saufenbilder.337279 İndeks Tarihi: 07-03-2019
Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program
Öz: The aim of the present study is to determine the pre-irradiation threshold voltages of the RadFET dosimeterswith gate oxide composed of high-k dielectrics and compare the results with the traditional sensors, the gateoxide of which is composed of SiO2. The effects of the p+ regions with different concentration, depth andlength on the electrical characteristic of the RadFETs were also investigated in the study. For thesepurposes, Al2O3, HfO2 high-k dielectrics and SiO2 with the thicknesses of 400 nm were used as the sensitiveregions of the dosimeters. The sensors were designed in the Silvaco TCAD simulation program. While thelengths of the p+ regions changed the Id-Vg characteristics of the RADFETs, the depths and concentrationsuntil a certain value of these regions did not play an important role in electrical characteristic. The lowestthreshold voltages obtained from the SiO2, Al2O3 and HfO2-RadFETs were found to be -5.22, -3.63, and -3.10 V, respectively. These results demonstrated that RadFETs with high-k dielectrics may be promisingcandidate for the new generated dosimeters in terms of broader measurable dose range providing theirradiation tests.
Anahtar Kelime: Farklı kapı oksitli RadFET dozimetrelerinin ışınlama öncesi elektriksel karakteristiklerinin TCAD benzetim programı ile değerlendirilmesi
Öz: Bu çalışmanın amacı, kapı oksiti yüksek-k’lı dielektriklerden oluşan RadFET dozimetrelerinin ışınlama öncesi eşik gerilimlerini belirlemek ve sonuçları, kapı oksiti SiO2’den oluşan geleneksel sensörlerle kıyaslamaktır. Ayrıca çalışmada, farklı konsantrasyonlu, derinlikli ve genişlikli p+ bölgelerinin RadFET’lerin elektriksel karakteristiği üzerine etkileri de incelenmiştir. Bu amaçla, dozimetrelerin duyar bölgeleri olarak 400 nm kalınlığında yüksek-k’lı Al2O3, HfO2 dielektrikleri ve SiO2 kullanılmıştır. Sensörler, Silvaco TCAD benzetim programında tasarlanmıştır. p+ bölgelerinin uzunlukları, Id-Vg karakteristiğini değiştirirken, bu bölgelerin derinlikleri ve belirli bir değere kadar konsantrasyonları elektriksel karakteristikte önemli bir rol oynamamıştır. SiO2, Al2O3 ve HfO2-RadFET’lerden elde edilen en düşük eşik voltajları sırasıyla, -5.22, -3.63 ve -3.10 V olarak bulunmuştur. Bu sonuçlar, yüksek-k dielektrikli RadFET’lerin, radyasyon testlerinin yapılması koşuluyla, daha geniş ölçülebilir doz aralığı açısından yeni nesil dozimetreler için gelecek vaat eden bir aday olduğunu göstermektedir.
Anahtar Kelime: Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık
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| APA | KAHRAMAN A, Yilmaz E (2017). Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program. , 1258 - 1265. 10.16984/saufenbilder.337279 |
| Chicago | KAHRAMAN Ayşegül,Yilmaz Ercan Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program. (2017): 1258 - 1265. 10.16984/saufenbilder.337279 |
| MLA | KAHRAMAN Ayşegül,Yilmaz Ercan Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program. , 2017, ss.1258 - 1265. 10.16984/saufenbilder.337279 |
| AMA | KAHRAMAN A,Yilmaz E Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program. . 2017; 1258 - 1265. 10.16984/saufenbilder.337279 |
| Vancouver | KAHRAMAN A,Yilmaz E Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program. . 2017; 1258 - 1265. 10.16984/saufenbilder.337279 |
| IEEE | KAHRAMAN A,Yilmaz E "Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program." , ss.1258 - 1265, 2017. 10.16984/saufenbilder.337279 |
| ISNAD | KAHRAMAN, Ayşegül - Yilmaz, Ercan. "Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program". (2017), 1258-1265. https://doi.org/10.16984/saufenbilder.337279 |
| APA | KAHRAMAN A, Yilmaz E (2017). Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program. Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 21(6), 1258 - 1265. 10.16984/saufenbilder.337279 |
| Chicago | KAHRAMAN Ayşegül,Yilmaz Ercan Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program. Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi 21, no.6 (2017): 1258 - 1265. 10.16984/saufenbilder.337279 |
| MLA | KAHRAMAN Ayşegül,Yilmaz Ercan Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program. Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, vol.21, no.6, 2017, ss.1258 - 1265. 10.16984/saufenbilder.337279 |
| AMA | KAHRAMAN A,Yilmaz E Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program. Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi. 2017; 21(6): 1258 - 1265. 10.16984/saufenbilder.337279 |
| Vancouver | KAHRAMAN A,Yilmaz E Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program. Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi. 2017; 21(6): 1258 - 1265. 10.16984/saufenbilder.337279 |
| IEEE | KAHRAMAN A,Yilmaz E "Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program." Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 21, ss.1258 - 1265, 2017. 10.16984/saufenbilder.337279 |
| ISNAD | KAHRAMAN, Ayşegül - Yilmaz, Ercan. "Evaluation of the pre-irradiation electrical characteristics of the RadFET dosimeters with diverse gate oxides by TCAD simulation program". Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi 21/6 (2017), 1258-1265. https://doi.org/10.16984/saufenbilder.337279 |
