A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices
Yıl: 2019 Cilt: 7 Sayı: 1 Sayfa Aralığı: 15 - 19 Metin Dili: İngilizce DOI: 10.17694/bajece.457395 İndeks Tarihi: 09-01-2020
A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices
Öz: Memristor-based resistive random access memory (RRAM) devices are very good competitors for next generation non-volatile crossbar memory applications. The sneak paths problem is one of the main constraints in fabricating crossbar memory devices. The one diode-one resistor (1D1R) structure design is effective for suppressing the sneak paths problem. Suitable circuit models are needed to simulate semiconductor structures.Ageneral circuit model for memristor-based one diode-one resistor structures is proposed in this work. The Simulation Program with Integrated Circuit Emphasis (SPICE) environment was used to simulate the designed circuit. Well-known mathematical models such as those of Strukov, Biolek, Joglekar, Prodromakis and Zha were used to simulate the memristor component of the circuit. The current-voltage characteristics were obtained for different mathematical models. All results were compatible with the expected characteristics. The best fit characteristics were acquired using the Zha and Strukov models.
Anahtar Kelime: Konular:
Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık
- M. A. Zidan, H. A. H. Fahmy, M. M. Hussain, and K. N. Salama, “Memristor-based memory: The sneak paths problem and solutions,” Microelectronics J., vol. 44, no. 2, pp. 176–183, Feb. 2013.
- A. Chen, “Memory Select Devices,” in Emerging Nanoelectronic Devices, Chichester, United Kingdom: John Wiley & Sons Ltd, 2014, pp. 227–245.
- C. Xu, D. Niu, N. Muralimanohar, R. Balasubramonian, T. Zhang, S. Yu, and Y. Xie, “Overcoming the challenges of crossbar resistive memory architectures,” in 2015 IEEE 21st International Symposium on High Performance Computer Architecture, HPCA 2015, 2015, pp. 476– 488.
- F.Gül and Y.Babacan, “A Circuit Model for Single Cell 1 Diode-1 Memristor (1D1M) Semiconductor Device,” in II. International Academic Research Congress, 2017, p. 548.C.
- D. B., Strukov, G. S., Snider, D. R. Stewart, and R. S., Williams, “The missing memristor found”, Nature, vol.453, pp.80-83, 2008.
- L.O., Chua, “Memristor - the missing circuit element,” IEEE Trans. Circuit Theory, vol.18, pp. 507-519, 1971.
- F. Gul and H. Efeoglu, “Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor,” Superlattices Microstruct., vol. 101, pp. 172–179, Jan. 2017.
- Z. Biolek, D. Biolek, and V. Biolková, “SPICE model of memristor with nonlinear dopant drift,” Radioengineering, vol. 18, no. 2, pp. 210–214, 2009.
- Y. N. Joglekar and S. J. Wolf, “The elusive memristor: Properties of basic electrical circuits,” Eur. J. Phys., vol. 30, no. 4, pp. 661–675, 2009.
- T. Prodromakis, B. P. Peh, C. Papavassiliou, and C. Toumazou, “A versatile memristor model with nonlinear dopant kinetics,” IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3099–3105, 2011.
- J. Zha, H. Huang, and Y. Liu, “A Novel Window Function for Memristor Model with Application in Programming Analog Circuits,” IEEE Trans. Circuits Syst. II Express Briefs, vol. 63, no. 5, pp. 423–427, 2016.
- Y. Babacan and F. Kacar, “FCS Based Memristor Emulator with Associative Learning Circuit Application,” Istanbul Univ. - J. Electr. Electron. Eng., vol. 17, no. 2, pp. 3433–3437, 2017.
- A. F. Adzmi, A. Nasrudin, W. F. H. Abdullah, and S. H. Herman, “Memristor Spice model for designing analog circuit,” 2012 IEEE Student Conf. Res. Dev., pp. 78–83, 2012.
- D. Batas and H. Fiedler, “A memristor SPICE implementation and a new approach for magnetic flux-controlled memristor modeling,” IEEE Trans. Nanotechnol., vol. 10, no. 2, pp. 250–255, 2011.
- S. Ç. Yener, R. Mutlu, and H. H. Kuntman, “Analysis of filter characteristics based on PWL Memristor,” Istanbul Univ. - J. Electr. Electron. Eng., vol. 14, no. 1, pp. 1709–1719, 2014.
- U. E. Ayten, S. Minaei, and M. Sağbaş, “Memristor emulator circuits using single CBTA,” AEU - Int. J. Electron. Commun., vol. 82, pp. 109– 118, 2017.
- R. Mutlu and E. Karakulak, “Emulator circuit of TiO2 memristor with linear dopant drift made using analog multiplier,” in National Conference on Electrical, Electronics and Computer Engineering (ELECO), 2012, pp. 380–384.
- H. Sözen and U. Çam, “Electronically tunable memristor emulator circuit,” Analog Integr. Circuits Signal Process., vol. 89, no. 3, pp. 655– 663, 2016.
- H. Sozen and U. Cam, “First-Order Memristor–Capacitor Filter Circuits Employing Hp Memristor,” J. Circuits, Syst. Comput., vol. 23, no. 8, p. 1450116, 2014.
- C. P. Uzunoglu, Y. Babacan, F. Kacar, and M. Ugur, “Modeling and Suppression of Chaotic Ferroresonance in a Power System by Using Memristor-based System,” Electr. Power Components Syst., vol. 44, no. 6, pp. 638–645, 2016.
- Y. Babacan, A. Yesil, and F. Kacar, “Memristor emulator with tunable characteristic and its experimental results,” AEU - Int. J. Electron. Commun., vol. 81, pp. 99–104, 2017.
- Y. Babacan and F. Kaçar, “Floating memristor emulator with subthreshold region,” Analog Integr. Circuits Signal Process., vol. 90, no. 2, pp. 471–475, 2017.
- Y. Babacan and F. Kaçar, “Memristor emulator with spike-timing-dependent-plasticity,” AEU - Int. J. Electron. Commun., vol. 73, pp. 16– 22, 2017.
- A. Yeşil, Y. Babacan, and F. Kaçar, “A new DDCC based memristor emulator circuit and its applications,” Microelectronics J., vol. 45, no. 3, pp. 282–287, 2014.
- C. Sanchez-Lopeza, M.A. Carrasco-Aguilar, and C. Muniz-Montero, “A 16 Hz–160 kHz memristor emulator circuit,” AEU-International Journal of Electronics and Communications, 1208-1219, 2015.
- F. Gul and Y. Babacan, “A novel OTA-based circuit model corroborated by an experimental semiconductor memristor,” Microelectron. Eng., vol. 194, pp. 56–60, Jul. 2018.
- Y. Babacan, A. Yesil, and F. Gul, “The Fabrication and MOSFET-Only Circuit Implementation of Semiconductor Memristor,” IEEE Trans. Electron Devices, 2018.
- F. Gul and H. Efeoglu, “ZnO and ZnO1−xbased thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior,” Ceram. Int., vol. 43, no. 14, pp. 10770–10775, 2017.
- F. Gul, “Carrier transport mechanism and bipolar resistive switching behavior of a nano-scale thin film TiO 2 memristor,” Ceram. Int., Mar. 2018.
- Z. Kolka, D. Biolek, and V. Biolkova, “Hybrid modelling and emulation of mem-systems,” Int. J. Numer Model Electronic Netw. Dev. Fields, pp. 216-225, 2012.
| APA | GÜL F (2019). A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices. , 15 - 19. 10.17694/bajece.457395 |
| Chicago | GÜL F. A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices. (2019): 15 - 19. 10.17694/bajece.457395 |
| MLA | GÜL F. A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices. , 2019, ss.15 - 19. 10.17694/bajece.457395 |
| AMA | GÜL F A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices. . 2019; 15 - 19. 10.17694/bajece.457395 |
| Vancouver | GÜL F A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices. . 2019; 15 - 19. 10.17694/bajece.457395 |
| IEEE | GÜL F "A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices." , ss.15 - 19, 2019. 10.17694/bajece.457395 |
| ISNAD | GÜL, F.. "A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices". (2019), 15-19. https://doi.org/10.17694/bajece.457395 |
| APA | GÜL F (2019). A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering, 7(1), 15 - 19. 10.17694/bajece.457395 |
| Chicago | GÜL F. A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering 7, no.1 (2019): 15 - 19. 10.17694/bajece.457395 |
| MLA | GÜL F. A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering, vol.7, no.1, 2019, ss.15 - 19. 10.17694/bajece.457395 |
| AMA | GÜL F A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering. 2019; 7(1): 15 - 19. 10.17694/bajece.457395 |
| Vancouver | GÜL F A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering. 2019; 7(1): 15 - 19. 10.17694/bajece.457395 |
| IEEE | GÜL F "A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices." Balkan Journal of Electrical and Computer Engineering, 7, ss.15 - 19, 2019. 10.17694/bajece.457395 |
| ISNAD | GÜL, F.. "A Generic Circuit Model for Memristor-Based One Diode-One Resistor Devices". Balkan Journal of Electrical and Computer Engineering 7/1 (2019), 15-19. https://doi.org/10.17694/bajece.457395 |
