Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD

öztürk, mustafa kemal; BİLGİLİ, Ahmet Kürşat; Ozbay, Ekmel; Akpınar, Ömer; Ozcelik, Suleyman; KURTULUŞ, Gürkan

Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD

A.Kürşat BİLGİLİ, (Gazi Üniversitesi Fizik Bölümü, 06500 Ankara, Türkiye)

Ömer AKPINAR, (Gazi Üniversitesi Fizik Bölümü, 06500 Ankara, Türkiye)

Gürkan KURTULUŞ, (Gazi Üniversitesi, Fotonik Araştırma Merkezi, 06500 Ankara, Türkiye)

M. Kemal ÖZTÜRK, (Gazi Üniversitesi Fizik Bölümü, 06500 Ankara, Türkiye)

Süleyman ÖZÇELİK, (Gazi Üniversitesi Fizik Bölümü, 06500 Ankara, Türkiye)

Ekmel ÖZBAY (Bilkent Üniversitesi, Nanoteknoloji Araştırma Merkezi, 06800 Ankara, Türkiye)

Politeknik Dergisi

3 0

Yıl: 2019 Cilt: 22 Sayı: 1 Sayfa Aralığı: 33 - 39 Metin Dili: İngilizce İndeks Tarihi: 18-12-2019

Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD

Öz:

Structural properties of InGaN/GaN solar cells (SCs) grown by metal organic chemical vapor deposition (MOCVD) technique are investigated by high resolution X-ray diffraction (HR-XRD) method. It is noticed that a- and c- lattice parameters of the structures showed small differences according to examined (hkl) planes. Fault percentage of the a- and c- lattice parameters are also calculated. It is seen that fault percentage is smaller than %2 for all samples. Investigations have been made for three different samples. Differences in crystal quality caused by growth conditions are seen in all three samples. At the same time, properties such as crystal size, strain and stress are determined. During determination of stress, two different methods including elastic constants, Young module and Poisson ratio are used. Results gained from these two methods are compared with each other. Thermal expansion coefficients of InGaN are calculated for (002), (004), (006) and (121) planes for 100 oC temperature difference (300-400 oC). It is seen that peak positions gained from HR-XRD are nearly the same with the ones in database. All the results obtained from calculations are given in tables in the following sections of this article. It can be seen that all these results are in accordance with previous works done by different authors and with the real values.

Anahtar Kelime:

Konular: Mühendislik, Elektrik ve Elektronik Bilgisayar Bilimleri, Yazılım Mühendisliği Mühendislik, Makine Mühendislik, Jeoloji Bilgisayar Bilimleri, Bilgi Sistemleri Bilgisayar Bilimleri, Donanım ve Mimari Mühendislik, Kimya

Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık

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APA	BİLGİLİ A, Akpınar Ö, KURTULUŞ G, öztürk m, Ozcelik S, Ozbay E (2019). Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. , 33 - 39.
Chicago	BİLGİLİ Ahmet Kürşat,Akpınar Ömer,KURTULUŞ Gürkan,öztürk mustafa kemal,Ozcelik Suleyman,Ozbay Ekmel Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. (2019): 33 - 39.
MLA	BİLGİLİ Ahmet Kürşat,Akpınar Ömer,KURTULUŞ Gürkan,öztürk mustafa kemal,Ozcelik Suleyman,Ozbay Ekmel Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. , 2019, ss.33 - 39.
AMA	BİLGİLİ A,Akpınar Ö,KURTULUŞ G,öztürk m,Ozcelik S,Ozbay E Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. . 2019; 33 - 39.
Vancouver	BİLGİLİ A,Akpınar Ö,KURTULUŞ G,öztürk m,Ozcelik S,Ozbay E Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. . 2019; 33 - 39.
IEEE	BİLGİLİ A,Akpınar Ö,KURTULUŞ G,öztürk m,Ozcelik S,Ozbay E "Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD." , ss.33 - 39, 2019.
ISNAD	BİLGİLİ, Ahmet Kürşat vd. "Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD". (2019), 33-39.

APA	BİLGİLİ A, Akpınar Ö, KURTULUŞ G, öztürk m, Ozcelik S, Ozbay E (2019). Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. Politeknik Dergisi, 22(1), 33 - 39.
Chicago	BİLGİLİ Ahmet Kürşat,Akpınar Ömer,KURTULUŞ Gürkan,öztürk mustafa kemal,Ozcelik Suleyman,Ozbay Ekmel Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. Politeknik Dergisi 22, no.1 (2019): 33 - 39.
MLA	BİLGİLİ Ahmet Kürşat,Akpınar Ömer,KURTULUŞ Gürkan,öztürk mustafa kemal,Ozcelik Suleyman,Ozbay Ekmel Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. Politeknik Dergisi, vol.22, no.1, 2019, ss.33 - 39.
AMA	BİLGİLİ A,Akpınar Ö,KURTULUŞ G,öztürk m,Ozcelik S,Ozbay E Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. Politeknik Dergisi. 2019; 22(1): 33 - 39.
Vancouver	BİLGİLİ A,Akpınar Ö,KURTULUŞ G,öztürk m,Ozcelik S,Ozbay E Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD. Politeknik Dergisi. 2019; 22(1): 33 - 39.
IEEE	BİLGİLİ A,Akpınar Ö,KURTULUŞ G,öztürk m,Ozcelik S,Ozbay E "Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD." Politeknik Dergisi, 22, ss.33 - 39, 2019.
ISNAD	BİLGİLİ, Ahmet Kürşat vd. "Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD". Politeknik Dergisi 22/1 (2019), 33-39.