Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies
Yıl: 2019 Cilt: 15 Sayı: 2 Sayfa Aralığı: 139 - 143 Metin Dili: İngilizce DOI: 10.18466/cbayarfbe.460022 İndeks Tarihi: 24-01-2020
Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies
Öz: Electrical parameters of Erbium Oxide (Er 2 O 3 ) MOS capacitors depending on frequency were investigateddeeply, in this paper. Er 2 O 3 layers were deposited on p–Si substrates with (100) oriented using RF–magnetron sputtering method. The films were annealed at 500 o C in N 2 environment. C–V characteristicchanges reduce with increasing frequency. G/ω–V characteristic variations show different behavior between10–250 kHz and 250 kHz–1 MHz. It is thought that these different behaviors are caused by interface statesbetween silicon and Er 2 O 3 layer, series resistance (R s ) effects and the relaxation time of trapped states. TheR s values calculated by the C ma and G ma values at the high frequency and decrease with rising frequency.Then, C c –V and G c /ω–V characteristic curves were measured and compared to first measurements. Inaddition, interface state density (D it ), diffusion potential (V D ), and barrier height (Φ B ) were calculated andthese results demonstrate similar behaviors.
Anahtar Kelime: Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık
- Kahraman, A, Yilmaz, E, Aktag, A, Kaya, S. 2016. Evaluation of Radiation Sensor Aspects of Er2O3 MOS Capacitors under Zero Gate Bias. IEEE Transactions on Nuclear Science; 63(2): 1284– 1293.
- Laha, A, Osten, H.J, Fissel, A. 2007. Influence of Interface Layer Composition on the Electrical Properties of Epitaxial Gd2O3 Thin Films for High-K Application. Applied Physics Letters; 90: 113508-1-3.
- Kaya, S, Yilmaz, E. 2018. Modifications of Structural, Chemical, and Electrical Characteristics of Er2O3/Si Interface under Co-60 Gamma Irradiation. Nuclear Instruments & Methods in Physics Research B; 418: 74–79.
- Kitai, S, Maida, O, Kanashima, T, Okuyama, M. 2003. Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition. Japanese Journal of Applied Physics Part 1; 42: 247–253.
- Pampillon, M.A, Feijoo, P.C, San Andres, E. 2013. High Permittivity Gadolinium Oxide Deposited on Indium Phosphide by High-Pressure Sputtering without Interface Treatments. Microelectronic Engineering; 109: 236–239.
- Kao, C-H, Chen, H, Pan, Y.T, Chiu, J.S, Luc, T-C. 2012. The Characteristics of the High-K Er2O3 Dielectrics Deposited on Polycrystalline Silicon. Solid State Communications; 152: 504– 508.
- Mao, W, Fujita, M. 2015. Growth of Single-Phase Nanostructured Er2O3 Thin Films on Si (100) by Ion Beam Sputter Deposition. Surface & Coatings Technology; 283: 241–246.
- Kaya, S, Lok, R, Aktag, A, Seidel, J, Yilmaz, E. 2014. Frequency Dependent Electrical Characteristics of BiFeO3 MOS Capacitors.
- Fleetwood, D.M. 1996. Fast and Slow Border Traps in MOS Devices. IEEE Transactions on Nuclear Science; 43: 779–786.
- Inoue, M, Shimada, A, Shirafuji, J. 1996. Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors. Japanese Journal of Applied Physics Part 1; 35(12A): 5921–5924.
- Ravotti, F, Glaser, M, Rosenfeld, A.B, Lerch, M.L.E, Holmes-Siedle, A.G, Sarrabayrouse, G. 2007. Response of RadFET Dosimeters to High Fluencies of Fast Neutrons. IEEE Transactions on Nuclear Science; 54: 1170–1177.
- Kahraman, A, Yilmaz, E, Kaya, S, Aktag, A. 2015. Effects of Post Deposition Annealing, Interface States and Series Resistance on Electrical Characteristics of HfO2 MOS Capacitors. Journal of Materials Science-Materials in Electronics; 26(11): 8277-8284.
- Xiao, H, Huang, S.H. 2010. Frequency and Voltage Dependency of Interface States and Series Resistance in Al/SiO2/p-Si MOS structure. Materials Science in Semiconductor Processing; 13: 395.
- Tataroglu, A, Al-Ghamdi, A.A, El-Tantawy, F. 2016. Analysis of Interface States of FeO-Al2O3 Spinel Composite Film/p-Si Diode by Conductance Technique. Applied Physics a Materials Science & Processing; 122(3): 1–6.
- Cheung, S.K, Cheung, N.W. 1986. Extraction of Schottky Diode Parameters from Forward Current‐Voltage Characteristics. Applied Physics Letters; 49: 85-87.
- Hill, W.A, Coleman, C.C. 1980. A Single-Frequency Approximation for Interface-State Density Determination. Solid-State Electronics; 23(9): 987–993.
- Tataroglu, A, Altindal, A, Bulbul, M.M. 2005. Temperature and Frequency Dependent Electrical and Dielectric Properties of Al/SiO2/p-Si (MOS) Structure. Microelectronic Engineering; 81(1): 140–149.
- Sze, S.M. Physics of Semiconductor Devices; John Wiley and Sons Press: New Jersey, USA, 1981; pp 815.
- Jaksic, A, Rodgers, K, Gallagher, C, Hughes, P.J. Use of RADFETs for quality assurance of radiation cancer treatments, MIEL 2006-Proceedings, Belgrade, Serbia, 2006, pp 577–579.
- Kim, M.S, Kim, H.T, Chi, S. 2003. Distribution of Interface States in MOS Systems Extracted by the Subthreshold Current in MOSFETs under Optical Illumination. Journal of Korean Physical Society; 43(5): 873–878.
| APA | MORKOC B, KAHRAMAN A, Aktağ A, Yilmaz E (2019). Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. , 139 - 143. 10.18466/cbayarfbe.460022 |
| Chicago | MORKOC Berk,KAHRAMAN Ayşegül,Aktağ Aliekber,Yilmaz Ercan Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. (2019): 139 - 143. 10.18466/cbayarfbe.460022 |
| MLA | MORKOC Berk,KAHRAMAN Ayşegül,Aktağ Aliekber,Yilmaz Ercan Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. , 2019, ss.139 - 143. 10.18466/cbayarfbe.460022 |
| AMA | MORKOC B,KAHRAMAN A,Aktağ A,Yilmaz E Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. . 2019; 139 - 143. 10.18466/cbayarfbe.460022 |
| Vancouver | MORKOC B,KAHRAMAN A,Aktağ A,Yilmaz E Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. . 2019; 139 - 143. 10.18466/cbayarfbe.460022 |
| IEEE | MORKOC B,KAHRAMAN A,Aktağ A,Yilmaz E "Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies." , ss.139 - 143, 2019. 10.18466/cbayarfbe.460022 |
| ISNAD | MORKOC, Berk vd. "Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies". (2019), 139-143. https://doi.org/10.18466/cbayarfbe.460022 |
| APA | MORKOC B, KAHRAMAN A, Aktağ A, Yilmaz E (2019). Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. Celal Bayar Üniversitesi Fen Bilimleri Dergisi, 15(2), 139 - 143. 10.18466/cbayarfbe.460022 |
| Chicago | MORKOC Berk,KAHRAMAN Ayşegül,Aktağ Aliekber,Yilmaz Ercan Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. Celal Bayar Üniversitesi Fen Bilimleri Dergisi 15, no.2 (2019): 139 - 143. 10.18466/cbayarfbe.460022 |
| MLA | MORKOC Berk,KAHRAMAN Ayşegül,Aktağ Aliekber,Yilmaz Ercan Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. Celal Bayar Üniversitesi Fen Bilimleri Dergisi, vol.15, no.2, 2019, ss.139 - 143. 10.18466/cbayarfbe.460022 |
| AMA | MORKOC B,KAHRAMAN A,Aktağ A,Yilmaz E Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. Celal Bayar Üniversitesi Fen Bilimleri Dergisi. 2019; 15(2): 139 - 143. 10.18466/cbayarfbe.460022 |
| Vancouver | MORKOC B,KAHRAMAN A,Aktağ A,Yilmaz E Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. Celal Bayar Üniversitesi Fen Bilimleri Dergisi. 2019; 15(2): 139 - 143. 10.18466/cbayarfbe.460022 |
| IEEE | MORKOC B,KAHRAMAN A,Aktağ A,Yilmaz E "Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies." Celal Bayar Üniversitesi Fen Bilimleri Dergisi, 15, ss.139 - 143, 2019. 10.18466/cbayarfbe.460022 |
| ISNAD | MORKOC, Berk vd. "Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies". Celal Bayar Üniversitesi Fen Bilimleri Dergisi 15/2 (2019), 139-143. https://doi.org/10.18466/cbayarfbe.460022 |
