Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta

Rahim MADATOV, (Azerbaijan National Academy of Sciences)
Rakshana MAMISHOVA, (Azerbaijan National Academy of Sciences)
Muslim MAMEDOV, (Azerbaijan National Academy of Sciences)
Javanshir ISMAYILOV, (Azerbaijan State Oil and Industry University)
Ulviya FARADJOVA (National Aviation Academy)
Turkish Journal of Physics
0 0
Yıl: 2020 Cilt: 44 Sayı: 2 Sayfa Aralığı: 214 - 221 Metin Dili: İngilizce DOI: 10.3906/fiz-1906-14 İndeks Tarihi: 04-05-2020

Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta

Öz:
Herein, the effect of γ -quanta on electrophysical and photoelectric properties of p-type Pb1−x Mnx Seepitaxial films obtained from the molecular cluster on the glass substrate by the method of condensation has beeninvestigated. It has been established that the acceptor-type local levels with the ionization energy of 0.14 eV and 0.175eV are generated, when p-type Pb1−x Mnx Se (x = 0.01) epitaxial films are irradiated by γ -quanta at D >10 kGy doses.The increase in the photoconductivity in the low temperature range 80-180K is due to the discharge of 0.14eV level, butthe decrease in the rate of change of photocurrent in the high temperature range is due to the role of local level with0.175 eV energy as a recombination center.
Anahtar Kelime:

Konular: Fizik, Uygulamalı Fizik, Katı Hal Fizik, Atomik ve Moleküler Kimya Fizik, Akışkanlar ve Plazma Fizik, Nükleer Fizik, Matematik Fizik, Partiküller ve Alanlar
Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık
  • [1] Abasova AZ, Madatov RS, Stafeev VI. Radiation-stimulated processes in chalcogenide structures. Baku, Azerbaijan: ELM, 2010.
  • [2] Abrikosov NKh, Shelimova LE. Semiconductor materials based on AIV BV I compounds. Moscow, Russia: Science, 1975.
  • [3] Zogg H, Maissen C, Masek J. Epitaxial lead chalcogenide IR sensors on Si for 3–5 and 8–12 μm. Semiconductor Science and Technology 1990; 5: 49-52.
  • [4] Ravich YuI, Efimova BA, Smirnov IA. Methods for studying semiconductors as applied to leadchalcogenides PbTe, PbSe, PbS. Moscow, Russia: Science, 1985.
  • [5] Sizov FF. Solid solutions of lead and tinchalcogenides and photographic devices based on them. Foreign electronics. Moscow, Russia: Science, 1977.
  • [6] Abrikosov NKh, Shelimova LE. Semiconductor materials based on AIV BV I compounds. Moscow, Russia: Science, 1975.
  • [7] Kiyosawa T, Takahashi S, Koguchi N. Partial phase diagram of new quaternary semiconductor Pb1−x Mnx S1−y Sey for mid-infrared lasers. Journal of Material Science 1992; 27: 5303-5305.
  • [8] Akimov BA, Lvov NP, Ryabova LI. Photoconductivity kinetics in Pb1-xMnxTe (In) solid solutions as their composition changes. Semiconductor Physics and Technology 1996; 30: 1647-1653.
  • [9] Zasavitsky II, Kovalchik LN, Matsonalshvili BN, Sazonov AV. Photoluminescence of semi-magnetic semiconductors of ÀIV BV I type. Semiconductor Physics and Technology 1988; 2: 2118-2123.
  • [10] Bagieva GZ, Abdinova GD, Mustafayev NB, Abdinov DSh. Electrical properties of Pb1−x Mnx Te single crystals with tellurium excess.Semiconductor Physics and Technology 2013; 47: 289-292.
  • [11] Nuriyev HR, Farzaliyev SS, Faradjev NV, Sadigov RM. Photoelectric and optical properties of Pb1−x Mnx Te (Ga) epitaxial films. In: 18th International Conference on Photoelectronics and Night Vision Devices; Moscow, Russian Federation; 2005. pp. 106-108.
  • [12] Nuriyev İR, Gadzhieva NN, Ramazanov MA, Sadighov RM, Mamishova RM. A microscopic study of the effect of γ -radiation on Pb1−x Mnx Se epitaxial films. Surface Engineering and Applied Electrochemistry 2013; 49: 45-50.
  • 13] Skipetrov EP, Zvereva EA, Kovalev BB, Skipetrova LA.Dielectric-metal transition under pressure inPb1−x Snx Se alloys (x≤0.03) irradiated by electrons. Semiconductor Physics and Technology 1998; 32: 663-667.
  • [14] Skipetrov EP, Zlomanov VP, Ladygin EA, Mater. VII Vses. Symp.: Semiconductors with a narrow band gap and semimetals 1986; 125-127.
  • [15] Mamadalimov AT, Onarkulov KE, Parpiev TK. Effect of γ -radiation on the kinetic coefficients of Pb1−x Snx Te films. Semiconductor Physics and Technology 1996; 30: 652-655.
  • [16] Mamişova RM. The Investigation of electrical conductivity of the gamma-quantum irradiated Pb1−x Mnx Se epitaxial films. Baku World Forum of Young Scientists. Baku, Azerbaijan 2014; 194-195.
  • [17] Vavilov VS, Kekelidze NP, Smirnov LS. Effect of radiation on semiconductors. Moscow, Russia: Science, 1988.
  • [18] Vavilov VS, Ukhin NA. Radiation effects in semiconductors. Moscow, Russia: Science, 1969.
  • [19] Volkov BA, Pankratov OA. Electronic structure of point defects in A4 B6 semiconductors. Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki 1985; 88: 280-292 (in Russian).
  • [20] Madatov RS, Najafov AN, Nuriyev IR, Mamedov MA, Mamishova RM. 11th International Conference Nuclear and Radiation Physics. Baku, Azerbaijan. 2017; 252-253.
  • [21] Lampert M, Mark P. Injection currents in solids. Moscow, Russia: Peace, 1973.
  • [22] Lashkarev VE, Lyuchenko AV, Sheinkman MK. Nonequilibrium processes in photoconductors. Kiev, Ukraine: Science Dumka, 1988.
APA MADATOV R, MAMISHOVA R, MAMEDOV M, ISMAYILOV J, FARADJOVA U (2020). Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta. , 214 - 221. 10.3906/fiz-1906-14
Chicago MADATOV Rahim,MAMISHOVA Rakshana,MAMEDOV Muslim,ISMAYILOV Javanshir,FARADJOVA Ulviya Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta. (2020): 214 - 221. 10.3906/fiz-1906-14
MLA MADATOV Rahim,MAMISHOVA Rakshana,MAMEDOV Muslim,ISMAYILOV Javanshir,FARADJOVA Ulviya Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta. , 2020, ss.214 - 221. 10.3906/fiz-1906-14
AMA MADATOV R,MAMISHOVA R,MAMEDOV M,ISMAYILOV J,FARADJOVA U Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta. . 2020; 214 - 221. 10.3906/fiz-1906-14
Vancouver MADATOV R,MAMISHOVA R,MAMEDOV M,ISMAYILOV J,FARADJOVA U Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta. . 2020; 214 - 221. 10.3906/fiz-1906-14
IEEE MADATOV R,MAMISHOVA R,MAMEDOV M,ISMAYILOV J,FARADJOVA U "Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta." , ss.214 - 221, 2020. 10.3906/fiz-1906-14
ISNAD MADATOV, Rahim vd. "Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta". (2020), 214-221. https://doi.org/10.3906/fiz-1906-14
APA MADATOV R, MAMISHOVA R, MAMEDOV M, ISMAYILOV J, FARADJOVA U (2020). Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta. Turkish Journal of Physics, 44(2), 214 - 221. 10.3906/fiz-1906-14
Chicago MADATOV Rahim,MAMISHOVA Rakshana,MAMEDOV Muslim,ISMAYILOV Javanshir,FARADJOVA Ulviya Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta. Turkish Journal of Physics 44, no.2 (2020): 214 - 221. 10.3906/fiz-1906-14
MLA MADATOV Rahim,MAMISHOVA Rakshana,MAMEDOV Muslim,ISMAYILOV Javanshir,FARADJOVA Ulviya Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta. Turkish Journal of Physics, vol.44, no.2, 2020, ss.214 - 221. 10.3906/fiz-1906-14
AMA MADATOV R,MAMISHOVA R,MAMEDOV M,ISMAYILOV J,FARADJOVA U Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta. Turkish Journal of Physics. 2020; 44(2): 214 - 221. 10.3906/fiz-1906-14
Vancouver MADATOV R,MAMISHOVA R,MAMEDOV M,ISMAYILOV J,FARADJOVA U Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta. Turkish Journal of Physics. 2020; 44(2): 214 - 221. 10.3906/fiz-1906-14
IEEE MADATOV R,MAMISHOVA R,MAMEDOV M,ISMAYILOV J,FARADJOVA U "Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta." Turkish Journal of Physics, 44, ss.214 - 221, 2020. 10.3906/fiz-1906-14
ISNAD MADATOV, Rahim vd. "Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta". Turkish Journal of Physics 44/2 (2020), 214-221. https://doi.org/10.3906/fiz-1906-14
Sayfa Oluşturulma Tarihi
23-04-2024 11:30

İLETİŞİM

TÜBİTAK ULAKBİM TR Dizin

Yüzüncüyıl, İşçi Blokları Mahallesi

Muhsin Yazıcıoğlu Caddesi No:51/C

06530 Çankaya / ANKARA +90 (312) 298 92 00

trdizin@tubitak.gov.tr

TÜBİTAK ULAKBİM Ulusal Akademik Ağ ve Bilgi Merkezi Cahit Arf Bilgi Merkezi © Tüm Hakları Saklıdır. Gizlilik Politikası Kullanım Şartları