Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer
Yıl: 2018 Cilt: 2 Sayı: 2 Sayfa Aralığı: 116 - 122 Metin Dili: İngilizce DOI: 10.32571/ijct.456902 İndeks Tarihi: 10-01-2021
Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer
Öz: We have fabricated, metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO2/n-GaAs. Metal rectifying contacts weremadebyDCmagnetronsputteringtechnique,and hafnium dioxide (HfO2) interfacial insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic layer depositon (ALD) technique.The series resistance values from the forward biascurrent-voltage (I-V) curves of 3 nm and 5 nm MIS structures has reduced very slightly with a decrease in the measurement temperature. Thediode potentialbarrier height value from I-Vcharacteristics increased with increasing HfO2layer thickness. Thus, the diode potential barrier height.was changed using the interfacial layer of the hafnium dioxide.Barrier height increment is an important and desirable feature in the field effect transistors (FET) and microwave mixers.
Anahtar Kelime: Yüksek k-arayüzey tabakalı metal-yalıtkan yarıiletken Au/Ti/HfO2/n-GaAs yapıların Elektriksel Karakteristikleri
Öz: Au/Ti/HfO2/n-GaAs metal-yalıtkan-yarıiletken (MIS) yapılar oluşturduk. Metal doğrultucu kontakları DC magnetron sputtering tekniğiyle yapıldı ve 3, 5 ve 10 nm kalınlıklı hafnium dioksit (HfO2) arayüzey yalıtım tabakası atomic layer depositon (ALD) tekniğiyle oluşturuldu. 3 ve 5 nm MIS diyotların doğru besleme akım-gerilim eğrilerinden seri direnç değerleri, ölçüm sıcaklığındaki bir azalma ile çok hafif bir şekilde azaldı. I-V karakteristiklerinden diyot potansiyel engel yüksekliği değeri artan HfO2 tabaka kalınlığıyla arttı. Böylece, hafnium dioksit arayüzey tabakası kullanılarak diyot potansiyel engel yüksekliği değiştirildi. Bariyer yükseklik artırma, alan etkili transistörler (FET) ve mikrodalga karıştırıcılarında önemli ve istenen bir özelliktir.
Anahtar Kelime: Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık
- 1. Rhoderick, E.H.; Williams, R.H. Metal-Semiconductor Contacts, Clerandon Press, Oxford University Press, 1988.
- 2. Mönch, W. Electronics Properties of Semiconductor Interfaces, Springer-Verlag, Berlin Heidelberg, 2004.
- 3. Sze, S.M. Physics of Semiconductor Devices, Second Ed. Willey, New York, 1981.
- 4. Colinge, J.P., Colinge, C.A. Physics of Semiconductor Devices, Kluwer Academic Publishers, New York, 2002.
- 5. Mo Wu, Alivov, Y.I.; Morkoc¸ H. J. Mater. Sci- Mater. El. 2008, 19, 915–951.
- 6. Missoum, I.; Ocak, Y.S., Benhaliliba, M., Benouis, C.E., Chaker, A. Synthetic Met. 2016, 214, 76.
- 7. Cheong, K.Y.; Moon, J.H.; Kim, H.J., Bahng, W.; Kim, N.K. J. Appl. Phys. 2008, 103, 084113.
- 8. Reddy, V.R.; Manjunath, V.; Janardhanam, V.; Kil, Y.H.; Choi, C-J. J. Electron. Mater. 2014, 43(9) 3499.
- 9. Turut, A. Karabulut, A.; Ejderha, K.; Bıyıklı, N. Mater. Res. Express 2015, 2, 046301.
- 10. Pan, T.M.; Lee, J.D.; Shu, W-H.; Chen, T.T. Appl. Phys. Lett. 2006, 89, 232908.
- 11. Cheung, S.K.; Cheung, N.W. Appl. Phys. Lett. 1986, 49, 85.
- 12. Kumar, R.; Chand, S. J. Electron. Mater. 2015, 44(1), 194.
- 13. E. E. Tanrıkulu, D. E. Yıldız, A. Günen, Ş. Altındal, Phys. Scripta 2015, 90, 095801.
- 14. Huang, W.C.; Linb, T.C.; Horng, C.T., Li, YH. Mat. Sci. Semicon. Proc. 2013, 16, 418-423
- 15. A. Gümüş and Ş. Altındal, Mat. Sci. Semicon. Proc. 2014, 28, 66-71.
- 16. Martens, K.; Wang, W.F.; Dimoulas, A.; Borghs, G.; Meuris, M.; Groseneken, G.; Maes, H.E. Solid State Electron. 2007, 51, 1101.
- 17. Korucu, D., Duman, S. Thin Solid Films 2013, 531, 436.
- 18. Jyothi, I.; Janardhanam, V; Hong, H.; Choi, C.J. Mat. Sci. Semicon. Proc. 2015, 39, 390.
- 19. Özden, Ş.; Tozlu C;. Pakma, O. Int. J. Photoenergy 2016, 2016, 6157905.
- 20. Chen J., Wang, Lv, Q. J.; Tang H.; Li, X.; J. Alloy. Compd. 2015, 649, 1220-1225.
- 21. Guzel, A.; Duman, S.; Yıldırım, N.; Turut, A. J. Electron. Mater. 2016, 45(6), 2808.
- 22. Kaushal, P.; Chand, S. Intern. J. Electron. 2016, 103(6), 937.
- 23. Asubay, S.; Genisel M.F.; Ocak, Y.S. Mater. Sci. Semicon. Proc. 2014, 28, 94.
- 24. Zizeng, L.; Mingmin, C.; Shengkai, W.; Qi, L.; Gongli, X.; Honggang L.; Haiou, L. J. Semicond. 2016, 37, 026002.
- 25. Morrison, D.J.; Wright, N.G.; Horsfall, A.B.; Johnson, C.M.; OÕNeill, A.G.; Knights, A.P.; Hilton, K.P.; Uren, M.J. Solid State Electron. 2000, 44, 1879.
- 26. Osvald, J.; Horvath, Zs.J. Appl. Surf. Sci. 2004, 234, 349.
- 27. Kavasoglu, N.; Kavasoglu, A.S.; Metin, B. Mater. Res. Bull. 2015, 70, 804.
- 28. Rahmatallahpur Sh.; Yegane, M. Physica B: Conden.Matter. 2011, 406, 1351-1356.
- 29. Sekhar, M.C.; Reddy, N.N.K.; Verma, V.K., Uthanna, S. Ceram. Int. 2016, 42, 18870.
- 30. Sani, N.; Wang, X.; Granberg, H.; Ersman, P.A.; Crispin, X.; Dyreklev, P.; Engquist, I.; Gustafsson, G.; Berggren, M. Sci. Rep. 2016, 6, 28921.
- 31. Duman, S.; Turgut, G.; Ozcelik, F.S.; Gurbulak, B. Philos. Mag. 2015, 95, 1646-1655.
- 32. Deniz, A.R; Çaldıran, Z.; Metin, Ö.; Meral, K.; Aydoğan, Ş.; J. Colloid Interf. Sci. 2016, 473, 172.
- 33. Mönch, W. Mat. Sci. Semicon. Proc. 2014, 28, 2–12.
- 34. Turut, A.; Ejderha, K.; Yildirim, N.; Abay, B. J. Semicond. 2016, 37(4), 044001.
- 35. Eglash, S.J.; Newman, N.; Pan, S.; Mo, D.; Shenai, K.; Spicer, W.E.; Ponce F.A.; Collins, D.M. J. Appl. Phys. 1987, 61, 5159.
- 36. Turut, A.; Bati, B.; Kȍkçe, A.; Sağlam, M.; Yalçin, N. Phys. Scripta 1996, 53, 118.
| APA | Karabulut A, orak i, TÜRÜT A (2018). Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer. , 116 - 122. 10.32571/ijct.456902 |
| Chicago | Karabulut Abdulkerim,orak ikram,TÜRÜT Abdülmecit Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer. (2018): 116 - 122. 10.32571/ijct.456902 |
| MLA | Karabulut Abdulkerim,orak ikram,TÜRÜT Abdülmecit Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer. , 2018, ss.116 - 122. 10.32571/ijct.456902 |
| AMA | Karabulut A,orak i,TÜRÜT A Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer. . 2018; 116 - 122. 10.32571/ijct.456902 |
| Vancouver | Karabulut A,orak i,TÜRÜT A Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer. . 2018; 116 - 122. 10.32571/ijct.456902 |
| IEEE | Karabulut A,orak i,TÜRÜT A "Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer." , ss.116 - 122, 2018. 10.32571/ijct.456902 |
| ISNAD | Karabulut, Abdulkerim vd. "Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer". (2018), 116-122. https://doi.org/10.32571/ijct.456902 |
| APA | Karabulut A, orak i, TÜRÜT A (2018). Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer. International Journal of Chemistry and Technology (IJCT), 2(2), 116 - 122. 10.32571/ijct.456902 |
| Chicago | Karabulut Abdulkerim,orak ikram,TÜRÜT Abdülmecit Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer. International Journal of Chemistry and Technology (IJCT) 2, no.2 (2018): 116 - 122. 10.32571/ijct.456902 |
| MLA | Karabulut Abdulkerim,orak ikram,TÜRÜT Abdülmecit Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer. International Journal of Chemistry and Technology (IJCT), vol.2, no.2, 2018, ss.116 - 122. 10.32571/ijct.456902 |
| AMA | Karabulut A,orak i,TÜRÜT A Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer. International Journal of Chemistry and Technology (IJCT). 2018; 2(2): 116 - 122. 10.32571/ijct.456902 |
| Vancouver | Karabulut A,orak i,TÜRÜT A Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer. International Journal of Chemistry and Technology (IJCT). 2018; 2(2): 116 - 122. 10.32571/ijct.456902 |
| IEEE | Karabulut A,orak i,TÜRÜT A "Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer." International Journal of Chemistry and Technology (IJCT), 2, ss.116 - 122, 2018. 10.32571/ijct.456902 |
| ISNAD | Karabulut, Abdulkerim vd. "Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer". International Journal of Chemistry and Technology (IJCT) 2/2 (2018), 116-122. https://doi.org/10.32571/ijct.456902 |
